Design and Simulation of RFID Dual-band LNA Based on CMOS Process

A dual-band low-noise amplifier can be used to design a RFID system while operating at 915 MHz and 2.45 GHz has been designed.The design to minimize the noise as the target,using parallel LC network instead of traditional single high inductance inductor,and then,introduction of the current reuse technology.Ultimately,achieve a high gain;low-power dual-band low-noise amplifier.The simulation results are as follows:In 915 MHz and 2.45 GHz frequencies,the noise coefficients were less than 0.6 dB;S(l,l) less than—15 dB;S(2,2) less than—11 dB; input VSWR≤1.4;output VSWR≤1.8;1 dB compression point is about—16.5 dBm.The simulation and comparison shows that the design in two bands in the test results were better than expected target,and provide a reference for the actual dual-band low-noise amplifier reference design and optimization.