XING Xiao-ming, LI Jian-cheng, ZHENG Li-hui. A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS[J]. Microelectronics & Computer, 2015, 32(10): 151-154,158. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.032
Citation: XING Xiao-ming, LI Jian-cheng, ZHENG Li-hui. A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS[J]. Microelectronics & Computer, 2015, 32(10): 151-154,158. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.032

A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS

  • This paper proposes a low-power bandgap voltage reference base on subthreshold CMOS. This circuit has superior performance such as low-power, low-temperature coefficient and reliability while the supply voltage hold the line. The simulation based on the 0.18 μm-CMOS process of TSMC. The design consists of MOSFETs,the bipolar transistor and resistors. All of MOSFETs work in subthreshold region, as a result,a low-power is achieved. The supply voltage of the voltage reference is 1.1 V,the output voltage is 0.59 V,which can operate with a supply voltage ranging from 0.8 V to 3 V and the power dissipation of Bandgap Voltage Reference is about 68 nW. When operating at a 1.1 V supply voltage within the temperature range from -40℃ to 80℃,the circuit has temperature coefficient of 14.8×10-6/℃, which has a better temperature stability.
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