DUAN Ji-hai, DENG Dong-yu, XU Wei-lin, WEI Bao-lin. A CMOS-only Nanopower Voltage Reference Without the Body Effect[J]. Microelectronics & Computer, 2015, 32(7): 152-156. DOI: 10.19304/j.cnki.issn1000-7180.2015.07.035
Citation: DUAN Ji-hai, DENG Dong-yu, XU Wei-lin, WEI Bao-lin. A CMOS-only Nanopower Voltage Reference Without the Body Effect[J]. Microelectronics & Computer, 2015, 32(7): 152-156. DOI: 10.19304/j.cnki.issn1000-7180.2015.07.035

A CMOS-only Nanopower Voltage Reference Without the Body Effect

  • An extreme low power voltage reference containing only MOSFETs is presented in this paper. The voltage reference consists of a nano-ampere current reference and a temperature compensation circuit. In the proposed circuit, the CMOS source coupled differential pairs is used to replace the resistors and bipolar transistors uesd in the traditional voltage reference circuits. This kind of construct can not only reduce the power consumption and chip area but also eliminate the influence of MOSFETs body effect on circuit.The design and simulation are based on SMIC 0.18 μm CMOS process.The results of simulation demonstrate that a temperature coefficient of 90 is achieved,the occupied chip area is 0.006,the power dissipation is 54 nW.This voltage reference is suitable for the mobile electronic devices with low power consumption.
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