LIU J,GAO S,WANG Z D,et al. A review of RF heterogeneous integrated microsystems multi-level co-simulation modeling and PDK technology[J]. Microelectronics & Computer,2024,41(1):11-25. doi: 10.19304/J.ISSN1000-7180.2023.0783
Citation: LIU J,GAO S,WANG Z D,et al. A review of RF heterogeneous integrated microsystems multi-level co-simulation modeling and PDK technology[J]. Microelectronics & Computer,2024,41(1):11-25. doi: 10.19304/J.ISSN1000-7180.2023.0783

A review of RF heterogeneous integrated microsystems multi-level co-simulation modeling and PDK technology

  • As one of the optional paths for post-Moore technology, integrated microsystems based on heterogeneous integration processes have the advantages of high integration, low cost, and high performance, which have attracted widespread attention in academia and industry. The system-centered multi-level collaborative design of heterogeneous integrated microsystem brings new challenges to the traditional transistor-centered design approach, and also brings new requirements to the development of the Electronic Design Automation(EDA) tools. This article reviews the latest advances in technologies such as basic device/structure modeling methods, multi-process hybrid Process Design Kit(PDK) technology, and circuit-module-system multi-level co-simulation, required in the design of radio frequency integrated microsystems.
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