TIAN W C,QIAN Y Y,ZHAO J R,et al. Research progress of microsystem packaging based on silicon carbide devices[J]. Microelectronics & Computer,2023,40(1):50-63. doi: 10.19304/J.ISSN1000-7180.2022.0717
Citation: TIAN W C,QIAN Y Y,ZHAO J R,et al. Research progress of microsystem packaging based on silicon carbide devices[J]. Microelectronics & Computer,2023,40(1):50-63. doi: 10.19304/J.ISSN1000-7180.2022.0717

Research progress of microsystem packaging based on silicon carbide devices

  • SiC has been widely concerned for its superior material properties. The packaging form of traditional devices restricts the full play of the advantages of SiC devices. To address the issue that the electrical, thermal and insulation performance, new packaging technologies and solutions for SiC devices have emerged in recent years. Based on the modular microsystem packaging technology of SiC devices, the packaging materials, module packaging structure, packaging technology and application of SiC devices are classified and summarized, covering a series of related technologies such as improving high-temperature resistance, reducing high-frequency parasitic inductance, and enhancing heat dissipation performance. Then the scientific challenges of silicon carbide devices are summarized. Finally, the future development trend of related technologies is prospected.
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