Research progress of silicon-based 3D integrated RF passive devices and circuits

RF circuit occupies a large proportion in the mobile communication terminal and the radar front-end electronic system such as the area and volume. The existing radio frequency (RF) integration methods cannot realize the miniaturization, multi-function and integrated RF passive system, which becomes the bottleneck of system miniaturization integration and performance improvement, and restricts the development of various electronic devices and communication systems. Based on the development of Through-Silicon Via (TSV) technology, three-dimensional (3D) stacking of silicon-based circuit can be realized, which has great potential and application prospects in realizing high-density, superior-performance and miniaturized RF integrated systems. In this paper, the latest research progress of main RF passive devices and passive circuits based on silicon-based 3D integration technology is introduced, mainly including capacitor, inductor, antenna, filter, power splitters, couplers and baluns. Finally, the research status and development trends of various RF devices and functional circuit modules are summarized and prospected.