ZHOU Xin, CHEN Langtao, QIAO Ming, LUO Ping, LI Zhaoji, ZHANG Bo. The development of radiation-hardened high voltage integrated circuits[J]. Microelectronics & Computer, 2022, 39(10): 1-16. DOI: 10.19304/J.ISSN1000-7180.2022.0434
Citation: ZHOU Xin, CHEN Langtao, QIAO Ming, LUO Ping, LI Zhaoji, ZHANG Bo. The development of radiation-hardened high voltage integrated circuits[J]. Microelectronics & Computer, 2022, 39(10): 1-16. DOI: 10.19304/J.ISSN1000-7180.2022.0434

The development of radiation-hardened high voltage integrated circuits

  • High voltage integrated circuit is the core chip for electric energy conversion and control. The new generation of space technology represented by the Starlink program is promoting the rapid development of space equipment toward small weight and power electrification, which has a great demand for radiation-hardened high voltage integrated circuits. Compared with large-scale digital integrated circuits, high voltage integrated circuits face the combined effect of high field and irradiation, leading to severe impacts with complex mechanisms. The purpose of this paper is to summarize research status on radiation effects in high voltage integrated circuits. Focusing on total ionizing dose effect and single event effect, irradiation effects, mechanisms and radiation-hardening technologies of high voltage integrated devices and analog integrated circuits are introduced and summarized.
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