LI Xinyu, FENG Quanyuan, CHEN Fei, WEN Yan, HUANG Jinwen. An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate[J]. Microelectronics & Computer, 2021, 38(12): 80-85. DOI: 10.19304/J.ISSN1000-7180.2021.0311
Citation: LI Xinyu, FENG Quanyuan, CHEN Fei, WEN Yan, HUANG Jinwen. An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate[J]. Microelectronics & Computer, 2021, 38(12): 80-85. DOI: 10.19304/J.ISSN1000-7180.2021.0311
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An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate

    Abstract
  • A discontinuous field plate with a polarization layer structure was proposed to improve the breakdown voltage of the depletion-mode AlGaN/GaN HEMT, and the mechanism of the increase of breakdown voltage was analyzed and explained. The breakdown voltage of the normally on AlGaN/GaN HEMT increased from 1187V when there was only a single field plate to 1573V. The new structure can ensure the normal operation of AlGaN/GaN HEMT under high voltage conditions and greatly improve the breakdown performance of the device.
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