Research on circuit macro-model of gate-controlled electrostatic protection device

In this paper, a new type of gate-controlled dual direction silicon controlled rectifier (GDDSCR) protection device is designed. Rx elements are used to replace the trigger surface of the silicon controlled rectifier (SCR) to simulate the triggering and holding behavior of SCR, and a SCR macro model for ESD protection is realized. The trigger voltage error between the transmission line pulse (TLP) test results and the model simulation results of the GDDSCR device manufactured by 0.18μm BCD process is 0.008V, and the sustain voltage error is 0.006V. The experimental results show that the established SCR macro model can effectively simulate the physical mechanism of SCR devices under ESD stress. The macro model directly extracts the relevant parameters from the same SCR structure used in the protected circuit, which greatly improves the modeling efficiency and eliminates the convergence problem in the simulation process of the traditional SCR model. It is of great significance to the design and verification of ESD protection circuit.