Investigation on high-temperature performance of 28nm UTB FDSOI

For the degradation of saturated output current value of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices caused by high temperature, the high temperature characteristics of SOI (Silicon-On-Insulator) process devices are analyzed. The results show that the saturated output current of FDSOI varies with temperature ΔI/I = 1.9%, much smaller than PDSOI's ΔI/I = 24.1%. The reason for this is that the structural advantage of the ultra-thin FD (Full Depletion) SOI results in lower threshold voltage temperature drift and smaller carrier mobility change compared with the PD (Partial Depletion) SOI.