WEN G G,ZHANG J C,LIAO J S. Research and design of a high speed high density MaskROM[J]. Microelectronics & Computer,2024,41(7):96-103. doi: 10.19304/J.ISSN1000-7180.2023.0422
Citation: WEN G G,ZHANG J C,LIAO J S. Research and design of a high speed high density MaskROM[J]. Microelectronics & Computer,2024,41(7):96-103. doi: 10.19304/J.ISSN1000-7180.2023.0422

Research and design of a high speed high density MaskROM

  • MaskROM plays an important role in MCU design and application, and high speed and high density is the future trend. A hybrid structure MaskROM is designed, which has the advantagesc of high integration of NAND and high speed of NOR. The more MOSFETs in series in the submodule, the higher the integration, but the speed will be reduced. By dividing the row decoding into small submodules, the array is divided into multiple submodules in parallel, and each submodule is selected as 5 MOSFETs in series. This not only improves integration but also maintains the characteristic of fast readout. In the selected submodule, the further selected Word Line(WL) is low, while the other WLs are high. The conducting MOS transistors short 4 rows, and the MOSFET with WL low is close. Therefore, whether the MOS transistor two ends are metal shorted determines whether the cell generates current. The way of wordline decoding can be summarized and understood through Formulas easily. SA adopts pseudo differential method and achieves fast cell reading through preset offset method. Based on 0.18μm 2P5M EEPROM process, a 32 K×34 bit MaskROM is designed and implemented. The chip test results show that the readout speed can reach 170 MHz under typical conditions.
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