宁可庆, 史力轺, 戴澜. 10位10MS/s全电容SAR ADC的设计[J]. 微电子学与计算机, 2016, 33(1): 135-139.
引用本文: 宁可庆, 史力轺, 戴澜. 10位10MS/s全电容SAR ADC的设计[J]. 微电子学与计算机, 2016, 33(1): 135-139.
NING Ke-qing, SHI Li-yao, DAI Lan. Design of a 10 Bits 10 MS/s SAR ADC with All Capacitor DAC[J]. Microelectronics & Computer, 2016, 33(1): 135-139.
Citation: NING Ke-qing, SHI Li-yao, DAI Lan. Design of a 10 Bits 10 MS/s SAR ADC with All Capacitor DAC[J]. Microelectronics & Computer, 2016, 33(1): 135-139.

10位10MS/s全电容SAR ADC的设计

Design of a 10 Bits 10 MS/s SAR ADC with All Capacitor DAC

  • 摘要: 设计了一种10位10 Ms/s SAR ADC.该电路内置的DAC使用全电容阵列设计, 在电容阵列布局中采用新型算法来减少电容失配; 通过电容的上极板采样信号, 对电容阵列的开关逻辑电路进行优化, 在一定程度上降低了功耗; 比较器使用降低回馈噪声设计; 最终对版图布局中各个部分的寄生参数进行了优化.后仿真结果表明: 使用SMIC 0.18 μm工艺在1.8 V电源下, SNDR达到59 dB, 即有效位达到9.5位, 芯片面积为0.6 mm2.

     

    Abstract: In this paper it presents a 10 bits 10-MS/s successive approximation register analog-to-digital converter that use a monotonic capacitor switching procedure, a new layout algorithm is adopted to reduce the mismatch in the capacitor array. It lows the power by Signal sampling on the plus of capacitor and optimal capacitor switching logic. And a low kick-back noise latch is proposed in the design of comparator. At last, optimizing the parasitic parameters of each part circuits in the layout of SAR ADC. The chip was fabricated using SMIC 0.18 μm CMOS technology with1.8V supply, the10 bit 10 MS/s SAR ADC achieves SNDR of 59.0 dB and the ENOB is 9.5 bits in the post-simulation. The ADC core occupies an active area of 0.6 mm2.

     

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