程立, 黄鲁. 一种高性能无片外电容型LDO设计[J]. 微电子学与计算机, 2017, 34(10): 119-122.
引用本文: 程立, 黄鲁. 一种高性能无片外电容型LDO设计[J]. 微电子学与计算机, 2017, 34(10): 119-122.
CHENG Li, HUANG Lu. Design of a High Performance Output-Capacitorless LDO[J]. Microelectronics & Computer, 2017, 34(10): 119-122.
Citation: CHENG Li, HUANG Lu. Design of a High Performance Output-Capacitorless LDO[J]. Microelectronics & Computer, 2017, 34(10): 119-122.

一种高性能无片外电容型LDO设计

Design of a High Performance Output-Capacitorless LDO

  • 摘要: 设计了一种高性能无片外电容型LDO线性稳压器.其中, EA采用推挽输出放大器设计, 在静态时保持低功耗, 瞬态响应时提供大的输出电流, 提高LDO的响应速率.高环路增益使LDO电路具有很高的稳压精度; 采用零点补偿技术, 保证了LDO环路稳定性.LDO采用0.13 μm CMOS工艺设计, 仿真结果表明, 在1.2 V~2.0 V输入电压下, LDO输出稳定的1.0 V电压, 输出负载电流为50 μA~100 mA, 最大负载电容可达到100 pF, 低频PSR为-67.5dB@100mA~-85.5dB@50μA, 负载调整率0.8μV/mA, LDO的静态电流为50 μA, 整体版图面积为0.016 3 mm2.

     

    Abstract: A High Performance Output-Capacitorless LDO is presented in this paper. In this design, EA applies a push-pull output amplifier, so that it can maintain low power consumption in quiescent state, and provide large output current in the transient response, which greatly improve the response rate. High loop gain allows the LDO circuit to achieve very high regulation accuracy; and using zero compensation technology to enhance the stability of the LDO loop. The LDO is designed in 0.13 μm CMOS process. Simulation results show that the output voltage can be stable at 1.0 V when its supply is range from 1.2 V to 2.0 V. The output load current is from 50uA to 100 mA, the maximum load capacitance is up to 100 pF, PSR at low frequency is -67.5dB@100mA~-85.5dB@50μA. Load regulation is 0.8μV/mA. The LDO only consumes 50 μA quiescent current, and the overall layout area is 0.0163mm2.

     

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