一种用于评估抗辐射DSP单粒子翻转的试验方法

An Experimental Method for Evaluating the SEU of Radiation-Hardened DSP

摘要: 本文提出了评估DSP电路单粒子翻转效应的试验方法, 该方法包含单独静态检测SRAM、通过CPU读取内部寄存器和功能检测等三种方式.根据该方法, 设计了DSP电路的单粒子翻转检测软件系统和硬件检测系统, 并在HI-13串列重离子加速器上进行了单粒子翻转验证试验, 获得了待测DSP器件的地面模拟翻转率数据.利用在轨错误率计算软件, 计算出在标准辐照注量(1.0E+7 icons/cm²)下电路的SEU在轨软错误率约为1.8E-12错误/位天(GEO, 等效3 mm Al屏蔽), 运用该方法可以较好的评估DSP电路的单粒子翻转性能.

Abstract: This paper presents a new experimental method to evaluate the SEU performance of radiation-hardened DSP. The method includes three ways of solely detecting SRAM, detecting regs by CPU and function-detecting. Software and hardware detection systems are designed by the method, and SEU experimental test was done on HI-13 heavy-ion accelerator. The results show that the error rate of DSP is about 1.8E-12 error/bit·day(GEO) under irradiation dose of 1.0E+7 icons/cm², which means the experimental method can be used for well evaluating the SEU performance of DSP.