邢小明, 李建成, 郑礼辉. 一种低功耗亚阈值CMOS带隙基准电压源[J]. 微电子学与计算机, 2015, 32(10): 151-154,158. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.032
引用本文: 邢小明, 李建成, 郑礼辉. 一种低功耗亚阈值CMOS带隙基准电压源[J]. 微电子学与计算机, 2015, 32(10): 151-154,158. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.032
XING Xiao-ming, LI Jian-cheng, ZHENG Li-hui. A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS[J]. Microelectronics & Computer, 2015, 32(10): 151-154,158. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.032
Citation: XING Xiao-ming, LI Jian-cheng, ZHENG Li-hui. A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS[J]. Microelectronics & Computer, 2015, 32(10): 151-154,158. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.032

一种低功耗亚阈值CMOS带隙基准电压源

A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS

  • 摘要: 提出了一种新型的低功耗亚阈值型CMOS带隙基准电压电路.该电路在不增加工作电源电压的情况下具有低功耗、低温度系数和高可靠性的优越性能,采用TSMC 0.18 μm工艺仿真实现.该设计电路由MOS管、双极型晶体管和电阻组成,并且所有MOS管均工作在亚阈值状态,从而实现了较低的功耗.该带隙基准电压源的工作电压为1.1 V,输出电压0.59 V,消耗功耗约为68 nW,在0.8~3 V电压下均能稳定工作.在电源电压为1.1 V和-40~80℃的工作温度下,电压基准的温度系数为14.8×10-6/℃,具有优良的温度稳定性.

     

    Abstract: This paper proposes a low-power bandgap voltage reference base on subthreshold CMOS. This circuit has superior performance such as low-power, low-temperature coefficient and reliability while the supply voltage hold the line. The simulation based on the 0.18 μm-CMOS process of TSMC. The design consists of MOSFETs,the bipolar transistor and resistors. All of MOSFETs work in subthreshold region, as a result,a low-power is achieved. The supply voltage of the voltage reference is 1.1 V,the output voltage is 0.59 V,which can operate with a supply voltage ranging from 0.8 V to 3 V and the power dissipation of Bandgap Voltage Reference is about 68 nW. When operating at a 1.1 V supply voltage within the temperature range from -40℃ to 80℃,the circuit has temperature coefficient of 14.8×10-6/℃, which has a better temperature stability.

     

/

返回文章
返回