李少峰, 刘润民, 范世全, 苟伟, 谢毅, 耿莉. 基于电容耦合技术的快瞬态高稳定性LDR设计[J]. 微电子学与计算机, 2015, 32(10): 87-92,97. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.019
引用本文: 李少峰, 刘润民, 范世全, 苟伟, 谢毅, 耿莉. 基于电容耦合技术的快瞬态高稳定性LDR设计[J]. 微电子学与计算机, 2015, 32(10): 87-92,97. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.019
LI Shao-feng, LIU Run-min, FAN Shi-quan, GOU Wei, XIE Yi, GENG Li. A Fast-Transient and High Stability LDR Based on Capacitive-Coupling Method[J]. Microelectronics & Computer, 2015, 32(10): 87-92,97. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.019
Citation: LI Shao-feng, LIU Run-min, FAN Shi-quan, GOU Wei, XIE Yi, GENG Li. A Fast-Transient and High Stability LDR Based on Capacitive-Coupling Method[J]. Microelectronics & Computer, 2015, 32(10): 87-92,97. DOI: 10.19304/j.cnki.issn1000-7180.2015.10.019

基于电容耦合技术的快瞬态高稳定性LDR设计

A Fast-Transient and High Stability LDR Based on Capacitive-Coupling Method

  • 摘要: 设计了一种具有快速瞬态响应能力的低压差线性稳压器(Low Dropout Regulator,LDR).该LDR采用基于电容耦合技术的改进型电压缓冲器,在空载(Iload=0)和满负载(Iload=100 mA)之间跳变时,改进型电压缓冲器可动态地改变对调整管栅极的充电和放电电流,使得LDR的过冲或欠冲电压被迅速抑制,缩短瞬态恢复时间.通过采用电流缓冲器和等效串联电阻(Equivalent Series Resistance,ESR)零点频率补偿技术,确保了LDR在全负载范围内的稳定.设计的LDR采用标准0.18 μm CMOS工艺进行了仿真验证,结果显示,LDR空载下静态电流为35 μA,满负载时的静态电流为80 μA.输出电容为2.2 μF,负载电流由100 mA到0跳变时,瞬态响应时间和过冲电压分别为438 ns和4.2 mV;负载电流由0到100 mA跳变时,瞬态响应时间和欠冲电压分别为385 ns和12.9 mV.

     

    Abstract: A fast transient response Low Dropout Regulator (LDR) is designed, which is based on Capacitive-Coupling Method (CCM). When the load currents step between no load and full load, the improved voltage buffer can dynamically change the current to charge or discharge the gate of the regulation transistor to rapidly inhibit overshoots or undershoots of the LDR and shorten the recovery time. By employing the current-buffer and Equivalent Series Resistance (ESR) compensation methods, the stability of the LDR can be ensured in a wide range of the load currents. The LDR is designed with 0.18 μm standard CMOS process. Simulation results show that the regulator dissipates 35 μA at no load and 80 μA at full load. The output capacitor of designed LDR is 2.2 μF. The LDR reveals the step-down transient response time of 438 ns and the overshoot of 4.2 mV at the load stepping from 100 mA to 0. The step-up transient response time and undershoot voltage are 385 ns and 12.9 mV, respectively, at the load stepping from 0 to 100 mA.

     

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