一种高集成低辐射的隔离DC-DC变换器
A high integration isolated DC-DC converter with low radiated emissions
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摘要: 通过MEMS工艺与0.18 um BCD工艺的深度融合,设计了一种基于片上变压器的两芯片集成式隔离DC-DC变换器.该隔离DC-DC变换器隔离耐压5 kVrms,输入电压为3 V-5.5 V,输出电压3.3 V/5 V,峰值效率和最大输出功率分别为29%和0.5 W,SOP-8封装,体积为7.67 mm*5.8 mm*1 mm. 采用随机跳频技术,通过5-bit跳频模块控制振荡器的谐振频率在145 MHz-195 MHz范围内随机切换,从而降低其电磁辐射,测试表明辐射峰值最大降低25 dBuV.Abstract: Based on MEMS and 0.18 um BCD process, an isolated DC-DC converter using 5-kVrms integrated on-chip transformer is proposed. The converter is made up of only two silicon dice, which improves integration and reduces cost. The proposed dc–dc converter delivers up to 0.5 W output power with 29% maximum power efficiency in a compact 7.67 mm*5.8 mm*1 mm SOP-8 package, and its input voltage is 3 V-5.5 V, output voltage is 3.3 V/5 V. In order to control radiated emissions, the random frequency hopping technology is used to control oscillator’s resonant frequency ranging from 145 MHz to 195 MHz through 5-bit hopping. A 25 dBuV reduction of maximum harmonic peak value is achieved.