刘凌雁,高同强,蔡刚,等.一种面向生物医疗传感的电压型CMOS带隙基准源电路[J]. 微电子学与计算机,2023,40(9):83-89. doi: 10.19304/J.ISSN1000-7180.2022.0692
引用本文: 刘凌雁,高同强,蔡刚,等.一种面向生物医疗传感的电压型CMOS带隙基准源电路[J]. 微电子学与计算机,2023,40(9):83-89. doi: 10.19304/J.ISSN1000-7180.2022.0692
LIU L Y,GAO T Q,CAI G,et al. A voltage-based CMOS bandgap reference source circuit for biomedical sensing[J]. Microelectronics & Computer,2023,40(9):83-89. doi: 10.19304/J.ISSN1000-7180.2022.0692
Citation: LIU L Y,GAO T Q,CAI G,et al. A voltage-based CMOS bandgap reference source circuit for biomedical sensing[J]. Microelectronics & Computer,2023,40(9):83-89. doi: 10.19304/J.ISSN1000-7180.2022.0692

一种面向生物医疗传感的电压型CMOS带隙基准源电路

A voltage-based CMOS bandgap reference source circuit for biomedical sensing

  • 摘要: 基于生物医疗芯片中植入式神经刺激器的应用需求,提出了一种基于BCD工艺的电压型CMOS带隙基准源电路. 针对植入式芯片供电电压变化大的特点,在传统widlar电流源结构基础上,引入了二级运放输出反馈,为运放本身、带隙核心电路以及测温前端提供了稳定的偏置电流,以提高基准电路的电源抑制比以及线性调整率. 同时为了消除运放失调电压Vos对输出电压稳定性的影响,根据电阻阻值变化范围设计了电阻修调矩阵,降低了基准电压的温度系数. 选用TSMC 0.18 um BCD工艺进行设计仿真,仿真、测试结果表明,该基准源可以在1.8 V-6 V电压下正常工作,电压线性调整率为0.023%;电源抑制比在10 Hz时为−78 dB,100 Hz时为−55 dB. 在−40-125℃范围内,温漂系数为16.68 ppm. 电路总功耗在5 V电压下为90uW,芯片核心电路面积为0.15×0.38 mm2.

     

    Abstract: A voltage-based CMOS bandgap reference circuit is proposed for the application requirements of implantable neurostimulators in biomedical chips. The cascode current source and the two-stage op-amp structure are used to improve the power supply rejection ratio and the voltage line regulation. Based on the traditional widlar current source structure, the two-stage op-amp output feedback is introduced to provide a stable bias current for the op-amp itself, the bandgap core circuit and the temperature front-end. In order to eliminate the effect of the op-amp offset voltage Vos, a resistor trim matrix is designed according to the maximum range of resistance change of the process library, which improves the temperature coefficient of the reference voltage. The design circuit is based on TSMC 0.18 um BCD process, and the test results show that the voltage line regulation is 0.023% at 1.8 V-6 V, the power supply rejection ratio is −78 dB at 10 Hz and −55 dB at 100 Hz, the temperature coefficient is 16.68 ppm at −40℃-125℃, the total power consumption of the circuit is 90 uW at 5 V, and the core circuit chip area is 0.15×0.38 mm2.

     

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