张龙,马春宇,赵以诚,等.一种通道复用的高可靠性隔离IGBT栅极驱动器[J]. 微电子学与计算机,2023,40(4):80-87. doi: 10.19304/J.ISSN1000-7180.2022.0429
引用本文: 张龙,马春宇,赵以诚,等.一种通道复用的高可靠性隔离IGBT栅极驱动器[J]. 微电子学与计算机,2023,40(4):80-87. doi: 10.19304/J.ISSN1000-7180.2022.0429
ZHANG L,MA C Y,ZHAO Y C,et al. A high reliability isolated IGBT gate driver with channel multiplexing[J]. Microelectronics & Computer,2023,40(4):80-87. doi: 10.19304/J.ISSN1000-7180.2022.0429
Citation: ZHANG L,MA C Y,ZHAO Y C,et al. A high reliability isolated IGBT gate driver with channel multiplexing[J]. Microelectronics & Computer,2023,40(4):80-87. doi: 10.19304/J.ISSN1000-7180.2022.0429

一种通道复用的高可靠性隔离IGBT栅极驱动器

A high reliability isolated IGBT gate driver with channel multiplexing

  • 摘要: 采用SIMC 0.18 um BCD工艺,设计一种输出电流2 A,隔离电压5 kV,CMTI为100 kV/us的单通道隔离IGBT栅极驱动器,该IGBT栅极驱动器集成双侧欠压保护、退饱和保护,具有高可靠性. 为节省芯片面积和成本,提出一种通道复用技术,将高压侧退饱和状态监测信号(FLTH)和欠压闭锁状态监测信号(RDH)编码后使用一个数字隔离通道同时传输至低压侧,简化电路结构,节省芯片面积约10%. 当发生欠压闭锁时,隔离式IGBT栅极驱动器不工作;当未发生欠压闭锁时,可以通过编码信号的脉冲宽度来区分是否发生退饱和状态. 仿真与测试结果表明:采用通道复用技术可以准确的将高压侧的退饱和状态监测信号和欠压闭锁状态监测信号传输至低压侧.

     

    Abstract: Based on SIMC 0.18 um BCD process,a single channel isolated IGBT gate driver is designed, which has 2 A output current, 5 kV isolation voltage and CMTI 100 kV/us. It has high reliability by integrating desaturation protection and bilateral under-voltage lockout protection. In order to save chip area and cost, channel multiplexing technology is proposed. FLTH and RDH are desaturation status monitoring signal and under-voltage lockout status monitoring signal at high-voltage side respectively. FLTH and RDH are transmitted simultaneously using a same digital isolation channel. That greatly simplifies the circuit structure and saves about 10% of chip area. When under-voltage lockout occurs, isolated IGBT gate driver does not work. When under-voltage lockout does not occur, pulse width of the encode signal can be used to distinguish desaturation status. Simulation and test results show that channel multiplexing technology can accurately transmit desaturation state monitoring signal and under-voltage lockout state monitoring signal from high voltage side to low voltage side.

     

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