张华斌, 刘萍, 邓春健, 杨健君, 刘黎明, 陈卉, 王红航, 熊召新. 基于锗硅BiCMOS工艺的低噪声差分放大器设计[J]. 微电子学与计算机, 2017, 34(5): 35-39.
引用本文: 张华斌, 刘萍, 邓春健, 杨健君, 刘黎明, 陈卉, 王红航, 熊召新. 基于锗硅BiCMOS工艺的低噪声差分放大器设计[J]. 微电子学与计算机, 2017, 34(5): 35-39.
ZHANG Hua-bin, LIU Ping, DENG Chun-jian, YANG Jian-jun, LIU Li-ming, CHEN Hui, WANG Hong-hang, XIONG Zhao-xin. Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology[J]. Microelectronics & Computer, 2017, 34(5): 35-39.
Citation: ZHANG Hua-bin, LIU Ping, DENG Chun-jian, YANG Jian-jun, LIU Li-ming, CHEN Hui, WANG Hong-hang, XIONG Zhao-xin. Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology[J]. Microelectronics & Computer, 2017, 34(5): 35-39.

基于锗硅BiCMOS工艺的低噪声差分放大器设计

Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology

  • 摘要: 针对无线局域网前端接收机2.5 GHz的应用, 提出了一种硅锗工艺低噪声差分放大器.采用差分级联放大器结构既能抑制输入端的共模噪声信号, 又能因级联结构的高增益而抑制电路的噪声, 确保电路的高性能; 同时选用JAZZ 0.35 μm 1P4M锗硅BiCMOS工艺来制作.该放大器能有效地提供了50 Ω输入阻抗匹配且具备良好的温度特性.在频点2.5 GHz时, 放大器的最大小信号电压增益为29.1 dB, 噪声系数1.3 dB, 输入/输出回波损耗都优于-11 dB, 输入3阶交调点为-0.24 dBm.在直流电源电压3 V供应下, 低噪声放大器消耗电流为3.7 mA.仿真结果表明, 与其他文献相比, 该放大器有更高的电压增益和更低的噪声, 可以更加有效地应用于无线局域网及相关频点领域.

     

    Abstract: A differential lower noise amplifier (LNA) for wireless local network (WLAN) in front-end receiver is presented, which is fabricated with a JAZZ 0.35 μm 1P4M SiGe BiCMOS process. It can not only reject the common-mode noise signal in input port and but also depress circuit noise for using cascade topology, and realize its high performance. The LNA provides effectively a 50 Ωinput impedance matching and good temperature characteristic. At 2.5 GHz, the LNA exhibits a maximum small signal voltage gain of 29.1 dB, noise figure of 1.3 dB, input/output return loss better than -11 dB, and input IIP3 of -0.24 dBm, respectively. The LNA consumes 3.7 mA from a 3.0V DC supply. The simulation results show that, in comparison with the other LNAs, this LNA has higher voltage gain, lower noise and more efficaciously be utilized in WLAN and related fields.

     

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