一种提升抗单粒子能力的新型超结结构
A proposed structure to improve SEE performance for 700 V Super-Junction VDMOS
-
摘要: 为了提升超结器件在空间辐照环境下的可靠性, 针对额定电压为700 V的超结器件提出了一种新型结构.加固的结构在标准SJVDMOS平面栅的基础上刻蚀掉部分栅极, 同时引入了一个肖特基接触来提升器件的抗单粒子能力.2D synopsyssentaurus TCAD对器件进行了仿真建模, 并通过单粒子的瞬态仿真来评估器件的SEE性能, 仿真结果表明加固之后的器件在单粒子效应下的整体安全工作区大幅增加, 器件抗单粒子烧毁和抗单粒子栅穿的能力都明显提升, 同时新型结构的电学性能也维持了良好的水平.Abstract: In this paper, a new structure to improve the SEE performance for 700 V Super-Junction VDMOS is proposed. Part of the planar gate of the device is etched away, adding a Schottky contactto enhance the SEE performance.2D synopsyssentaurus TCAD is used to do simulation, and transient simulation is used to evaluate the SEE performance of the device. The simulation result shows that the overall safe working area of the device after reinforcement iseffectively increased, and the SEB and SEGR performance both improved significantly. At the same time, the electrical performance of the new structure also maintains a good level.
下载:
