吴晓文, 陈晓东, 刘轶. 应用于5GHz频段的宽带低噪声放大器设计[J]. 微电子学与计算机, 2018, 35(9): 95-98.
引用本文: 吴晓文, 陈晓东, 刘轶. 应用于5GHz频段的宽带低噪声放大器设计[J]. 微电子学与计算机, 2018, 35(9): 95-98.
WU Xiao-wen, CHEN Xiao-dong, LIU Yi. Design of a Wideband Low Noise Amplifierat 5 GHz Band[J]. Microelectronics & Computer, 2018, 35(9): 95-98.
Citation: WU Xiao-wen, CHEN Xiao-dong, LIU Yi. Design of a Wideband Low Noise Amplifierat 5 GHz Band[J]. Microelectronics & Computer, 2018, 35(9): 95-98.

应用于5GHz频段的宽带低噪声放大器设计

Design of a Wideband Low Noise Amplifierat 5 GHz Band

  • 摘要: 针对WLAN 802.11a/ax频段和未来第五代移动通信5 GHz以上应用, 设计了一款5~6 GHz的低噪声放大器(LNA), 其工艺基于IBM 0.18 μm SiGeBiCMOS工艺.该设计采用共发射极的两级放大结构, 第一级采用射极电感负反馈, 第二级采用电压并联负反馈, 有效优化了噪声系数和线性度.测试结果表明在5~6 GHz频率范围内, 输入反射系数S11和输出反射系数S22分别小于-14.6 dB和-12.8 dB, 正向增益S21大于10.4 dB, 噪声系数小于2.7 dB.在2.5 V工作电压下, 功耗为15 mW.

     

    Abstract: A low noise amplifier(LNA)for WLAN 802.11a/axstandard and 5th-Generation applicationscovering 5 to 6 GHz was designed based on IBM 0.18 μm SiGeBiCMOS process. The circuit adopted a two-stage and common emitter topology, the first stage used inductor feedback and the second stage used voltage shunt feedback which improvednoise figure and linearity. The proposed LNA had an input reflection coefficient and output reflection coefficient of -14.6 dB and -12.8 dB respectively from 5 to 6 GHz, the gain is 10.4 dB, and the noise figure is less than 2.7 dB. The proposed LNA consumed 15mW power at 2.5 V DC supply.

     

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