尚玉玲, 李伟超, 谈敏. 基于电容耦合的TSV故障非接触测试方法研究[J]. 微电子学与计算机, 2018, 35(11): 106-110.
引用本文: 尚玉玲, 李伟超, 谈敏. 基于电容耦合的TSV故障非接触测试方法研究[J]. 微电子学与计算机, 2018, 35(11): 106-110.
SHANG Yu-ling, LI Wei-chao, TAN Min. Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling[J]. Microelectronics & Computer, 2018, 35(11): 106-110.
Citation: SHANG Yu-ling, LI Wei-chao, TAN Min. Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling[J]. Microelectronics & Computer, 2018, 35(11): 106-110.

基于电容耦合的TSV故障非接触测试方法研究

Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling

  • 摘要: 硅通孔(Through Silicon Via, TSV)故障严重降低了集成电路的性能和可靠性, 因此对TSV的故障检测具有十分重要的意义.首先讨论了TSV的故障模型, 并且利用Elmore延时模型分析了TSV开路故障对信号传输延时的影响, 其次提出了一种基于电容耦合的TSV非接触测试电路, 通过测量信号延时的变化来检测TSV开路故障, 最后利用时间统计分析来预测故障电阻的大小。

     

    Abstract: Through-silicon vias seriously degrade the performance and reliability of integrated circuits and are therefore of great importance for fault detection of TSVs. Firstly, the fault model of TSV is discussed, and the effect of open fault of TSV on signal transmission delay is analyzed by using Elmore delay model. A non-contact test circuit of TSV based on capacitive coupling is proposed to detect open fault of TSV by measuring the signal delay changes, and finally time statistical analysis framework is used to predict the size of the fault resistance.

     

/

返回文章
返回