Abstract: A Trench Metal-Oxide-Semiconductor (T-MOS) with high-speed shutoff for high performance is proposed. Compared with conventional device, two vertical field planes are inserted into oxide trench in this new device, which introduce two new electric field peaks in the drift region to increase breakdown voltage and form a high electron-accumulated layer around the vertical drain field plane to decrease the specific on-resistance. Therefore, Baliga's figure of merit (FOM) of this new device is improved. Furthermore, due to the vertical field plane between the gate and drain field plane in this new device, it can lead to the gate-to-drain capacitance partly transferred to gate-to-source capacitance and drain-to-source capacitance. The results show that the proposed device with t_w=1.7 μm and N_d=2.3×10¹⁵ cm^-3 can achieve the Baliga's figure of merit of 84.8% improvement and drain-to-source charge of 26.8% improvement.