Abstract: Reducing the supply voltage to the near threshold region is one method to reduce the power consumption. However, operating in this region the performance of 6T-SRAM is very poor, and more sensitive to the process variation. In this paper, we introduce a novel 8T-SRAM, when compared to the standard 6T-SRAM, they have the equal static power consumption, and its read noise margin has doubled. So this 8T-SRAM not only has low power consumption, but also has high stability. Further, the impact of process variation on the read noise margin has been analysed, when compared to 6T-SRAM, 8T-SRAM is not sensitive to process variation.