刘军, 董鹏, 任福继. 基于对角线的硅通孔容错设计[J]. 微电子学与计算机, 2018, 35(11): 73-78.
引用本文: 刘军, 董鹏, 任福继. 基于对角线的硅通孔容错设计[J]. 微电子学与计算机, 2018, 35(11): 73-78.
LIU Jun, Dong Peng, REN Fu-ji. Diagonal-Based for TSV Fault Tolerance Design[J]. Microelectronics & Computer, 2018, 35(11): 73-78.
Citation: LIU Jun, Dong Peng, REN Fu-ji. Diagonal-Based for TSV Fault Tolerance Design[J]. Microelectronics & Computer, 2018, 35(11): 73-78.

基于对角线的硅通孔容错设计

Diagonal-Based for TSV Fault Tolerance Design

  • 摘要: 三维集成电路通过使用硅通孔(through-silicon vias, TSV)作为垂直方向上芯片的通信链路, 具有高密度, 高带宽, 低功耗等优点.由于TSV在制造和使用过程中可能会出现故障, 导致整个三维芯片的故障.为了提高三维芯片的良品率, TSV的良品率必须尽可能的提高.本文提出了一种新的基于对角线的TSV容错方案, 并提出了基于最大流算法的故障修复算法, 在TSV出现故障时使用对角线中的冗余TSV来修复故障TSV以提高整个三维芯片的良品率.实验结果表明, 相比基于路由的容错方案, 本文提出的基于对角线的TSV容错方案, 芯片修复率可以达到98.38%至98.96%, 方案造成的面积开销降低了70%左右。

     

    Abstract: Three dimensional integrated circuits, using through-silicon vias(TSVs) as the communication link between vertical chip, with the advantages of high density, high bandwidth and low power consumption. As the TSV during processing and using process may be failure, will lead to the entire three-dimensional chip failure. In order to improve the yield of 3D chips, the yield of TSV must be raised as much as possible. This paper presents a novel diagonal-based redundant TSV repair scheme and proposes a repair algorithm based on maximum flow algorithm to tolerance the faulty TSV with redundant TSVs in the diagonal to improve the yield of the entire three-dimensional chip. Experimental results show that the yield of the proposed repair strategy is 98.38% to 98.96% and the hardware overhead can be reduced by up to 70% compared to router-based technique.

     

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