胡孔阳, 胡海生, 刘小明. 三模冗余在高性能抗辐射DSP中的应用[J]. 微电子学与计算机, 2019, 36(3): 58-60.
引用本文: 胡孔阳, 胡海生, 刘小明. 三模冗余在高性能抗辐射DSP中的应用[J]. 微电子学与计算机, 2019, 36(3): 58-60.
HU Kong-yang, HU Hai-sheng, LIU Xiao-ming. The application of TMR on the high performance and anti radiation DSP[J]. Microelectronics & Computer, 2019, 36(3): 58-60.
Citation: HU Kong-yang, HU Hai-sheng, LIU Xiao-ming. The application of TMR on the high performance and anti radiation DSP[J]. Microelectronics & Computer, 2019, 36(3): 58-60.

三模冗余在高性能抗辐射DSP中的应用

The application of TMR on the high performance and anti radiation DSP

  • 摘要: 单粒子翻转(SEU, single event upset)是当高能粒子击中半导体元器件时, 引起逻辑发生"0""1"改变, 进而导致逻辑错误的现象.在诸如外太空等电磁辐射恶劣的环境中, 芯片常常会受到SEU的破坏, 由于高性能的DSP规模较大, 这种情况发生的概率会更高.针对SEU发生的原理, 在抗辐射DSP结构上可以采取多种加固技术.本文基于国产高性能DSP"魂芯"的架构, 从可测性和工程性的角度出发, 提出了对片上SRAM存储器的加固方案.通过对SRAM采用自刷新和三模冗余技术, 可以对SEU进行有效的抑制.

     

    Abstract: Single event upset is something when high energy particles hit the semiconductor device, it will cause the '1''0' transformation, and cause errors. In the harsh environment such as outer space, the chip will always be destroyed by SEU, the probability of this situation is higher since the larger scale of high performance of DSP. In view of SEU principle, anti radiation DSP will adopt a variety of reinforcement schemes. This article is based on the domestic high performance DSP 'HunXIn' architecture, from the perspective of testability and engineering, puts forward the scheme of SRAM reinforcement on chip. Through the self-refresh and trip modular redundancy technology, SEU can be effectively suppressed.

     

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