谢勇, 来强涛, 陈华, 姜宇, 郭桂良, 阎跃鹏. MEMS谐振器中高增益跨阻放大器设计[J]. 微电子学与计算机, 2016, 33(3): 46-50, 55.
引用本文: 谢勇, 来强涛, 陈华, 姜宇, 郭桂良, 阎跃鹏. MEMS谐振器中高增益跨阻放大器设计[J]. 微电子学与计算机, 2016, 33(3): 46-50, 55.
XIE Yong, LAI Qiang-tao, CHEN Hua, JIANG Yu, GUO Gui-liang, YAN Yue-peng. A High Gain CMOS Transimpedance Amplifier for Disc-Like MEMS Oscillators[J]. Microelectronics & Computer, 2016, 33(3): 46-50, 55.
Citation: XIE Yong, LAI Qiang-tao, CHEN Hua, JIANG Yu, GUO Gui-liang, YAN Yue-peng. A High Gain CMOS Transimpedance Amplifier for Disc-Like MEMS Oscillators[J]. Microelectronics & Computer, 2016, 33(3): 46-50, 55.

MEMS谐振器中高增益跨阻放大器设计

A High Gain CMOS Transimpedance Amplifier for Disc-Like MEMS Oscillators

  • 摘要: 微机械(MEMS)圆盘谐振器的振荡器具有相位噪声低, 抖动小, 温漂小等特点.采用TSMC 0.18 μm CMOS工艺设计实现了一款用于驱动MEMS圆盘谐振器的高增益、低噪声和低功耗跨阻放大器.该放大器采用低功耗宽带电流预放大和电流电压转换级输入技术, 结合基于Cherry-Hooper反相器电压放大的电路结构, 实现了增益、带宽、噪声、低电源电压和动态范围等指标间的折衷, 成功驱动了MEMS圆盘谐振器.Spectre仿真表明, 单端跨阻增益高达115 dBΩ, -3 dB带宽超过500 MHz, 等效输入噪声电流平均值为25 pA/\sqrt\mathrmHz, 功耗仅为17.6 mW, 芯片面积(包括所有PAD)为620 μm×620 μm.

     

    Abstract: Disc-Like MEMS oscillators are compared with quartz crystal oscillator counter parts in terms of phase-noise, jitter, and temperature stability. Base on these characteristics, a high gain, low noise and low power transimpedance amplifier is proposed to implement and driver a Disc-Like MEMS oscillator using TSMC 0.18 μm CMOS technology. Aiming at Disc-Like MEMS oscillators having a parasitic capacitance of 0.5 pF, a low-power broadband current pre-amplifier combined with a current-to-voltage conversion stage and an inverter based wideband Cherry-Hooper amplifier are used to realize the good tradeoff between gain, bandwidth, noise, lower power voltage and dynamic range.Spectre simulation indicate: the single-end transimpedance gain is 115 dBΩ, the -3 dB bandwidth is beyond 500 MHz, the average input equivalent noise current is 25 pA/\sqrt\mathrmHz, and the power dissipation is only 17.6 mW, The die size (including all the PADs) is as small as 620 μm×620 μm.

     

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