High-side driving circuit based on floating structure
-
摘要:
本文介绍了一种采用浮地结构的高边功率驱动电路, 包括输入级电路、稳压电路、浮地产生电路以及基于电荷泵驱动电路.针对传统驱动电路中存在的地信号干扰, 信号串扰问题、栅击穿以及稳压源电路提出了一种新的解决方法以及电路设计方法, 极大提高了高边功率驱动电路的稳定性.基于BCD工艺, 单电源电压7V~40V情况下的仿真结果表明:在2MHz振荡器频率下, 浮地电路可正常工作, 浮地上的纹波电压变化小于0.03V;可以对干扰信号进行有效过滤, 具有较强的防误触发能力.此新型浮地电路以及稳压源电路可很好的应用于高边功率驱动电路.
Abstract:This paper introduces a high-side power drive circuit using a floating structure, including an input stage circuit, a voltage stabilization circuit, a floating generation circuit, and a charge pump-based drive circuit.A new solution and circuit design method are proposed for the ground signal interference, signal crosstalk problem and voltage regulator source circuit existing in the traditional drive circuit, which greatly improve the stability of high-side power drive circuits.Based on BCD process, the simulation results under the condition of single power supply in the range of 7V ~ 40V show that the floating circuit can work normally at the frequency of 2MHz oscillator, and the ripple voltage variation on the floating ground is less than 0.03V. Moreover, it can filter the interference signal effectively, and has a strong ability to prevent error triggering. This new floating circuit and voltage regulator circuit can be well used in high side power drive circuit.
-
Key words:
- floating structure /
- on-chip voltage regulator /
- drive circuit /
- signal crosstalk
-
表 1 不同电源电压下稳压源输出电压
温度 7 V 10 V 18 V 24 V 40 V -40℃ 4.998 5.027 5.038 5.043 5.127 27℃ 4.960 4.977 5.000 5.004 5.010 125℃ 4.985 4.996 5.010 5.024 5.100 
下载: 导出CSV
-
[1] LEE J W, CHANG Y F, HSU C W, et al. Novel isolation ring structure for latch-up andpower efficiency improvement of smart power IC's[C]//Proceedings of the 2013 35th Electrical Overstress/Electrostatic Discharge Symposium.Las Vegas: IEEE, 2013: 1-5. [2] 胡冬青. 2012年IEEE国际功率半导体器件(电力电子器件)及功率集成电路会议综述[J].电力电子, 2012, 12(5): 6-24. https://www.cnki.com.cn/Article/CJFDTOTAL-DLDI201205012.htmHU D Q. Review of 2012 the 24th IEEE international symposium of power semi- conductor devices and ICS[J]. Power Electronics, 2012, 12(5): 6-24. https://www.cnki.com.cn/Article/CJFDTOTAL-DLDI201205012.htm [3] 崔建国, 宁永香.基准电压源电路的设计与研究[J].电子世界, 2018(23): 145. (查阅所有网上资料, 未找到对应的英文翻译, 请联系作者补充) https://www.cnki.com.cn/Article/CJFDTOTAL-ELEW201823091.htm [4] 毕查德·拉扎维.模拟CMOS集成电路设计[M].西安:西安交通大学出版社, 2013. (查阅所有网上资料, 未找到对应的英文翻译, 请联系作者补充) [5] SANSENW M C. Analog design essentials[M]. Boston:Springer, 2006. [6] SHUBIN V V. A New voltage level shifter for low-power applications[J]. Russian Microelectronics, 2019, 48(5): 335-339. DOI: 10.1134/S1063739719040085. [7] HOBRECHT S. An intelligent BiCMOS/DMOS quad 1-A high-side switch[J]. IEEE Journalof Solid-State Circuits, 1990, 25(6): 1395-1402. DOI: 10.1109/4.62167. [8] 彭锐.高压半桥驱动电路抗干扰分析与设计[D].合肥: 安徽大学, 2019.PENG Rui.Anti-interference analysis and design of high voltage half-bridge driving circuit[D]. Hefei: Anhui University, 2019. [9] 李阳.一种高边功率开关的控制与驱动电路设计[D].成都: 电子科技大学, 2016.LI Yang. Design of control and driving circuits forhigh-side power switch[D]. Chengdu: University of Electronic Science and Technology of China, 2016. -
下载:
点击查看大图
计量
- 文章访问数: 502
- HTML全文浏览量: 375
- PDF下载量: 50
- 被引次数: 0
