商新超, 袁甲, 张福海. 面向近亚阈值的标准单元库设计方法[J]. 微电子学与计算机, 2016, 33(3): 11-14.
引用本文: 商新超, 袁甲, 张福海. 面向近亚阈值的标准单元库设计方法[J]. 微电子学与计算机, 2016, 33(3): 11-14.
SHANG Xin-chao, YUAN Jia, ZHANG Fu-hai. The Design Method of Sub-threshold Standard Cell Library[J]. Microelectronics & Computer, 2016, 33(3): 11-14.
Citation: SHANG Xin-chao, YUAN Jia, ZHANG Fu-hai. The Design Method of Sub-threshold Standard Cell Library[J]. Microelectronics & Computer, 2016, 33(3): 11-14.

面向近亚阈值的标准单元库设计方法

The Design Method of Sub-threshold Standard Cell Library

  • 摘要: 由于商用标准单元无法支持在极低电压下工作, 为使数字电路能够工作其最优能耗点, 采用smic130 nm CMOS工艺, 对近/亚阈值电压下标准单元库的设计方法展开研究, 定制了近/亚阈值的标准单元库.测试结果显示, 所有库单元能够正常工作的电源电压低于90 mV.为了进一步验证定制标准单元库的稳定性, 我们提出了一个4×8的FIR滤波器, 测试芯片选择了130 nm的CMOS工艺进行流片, 测试结果显示时钟频率为100 Hz时, 最低能耗点的工作电压为0.25 V, 能耗是150 nJ/cycle, 芯片的最低工作电压为0.18 V.

     

    Abstract: Because of commercial standard cell library can'toperate at ultra low supply voltages, in order to make the digital circuits operate at the minimum energy point, we selected 130 nm CMOS technology and investigated the design method of Sub-threshold standard cell library. Measurements show that all of the cells in the library operate at voltage below 90 mv. In order to father validate the stability of sub-threshold standard cell library, We presented an 4×8 process FIR filter, a test chip has been implemented in a selected 130 nm CMOS technology, and measurements show that the minimum energy operating point is at 0.25 V, consuming 150 nJ with the clock frequency of 100 Hz, the minimum voltage supply for the chip is 0.18 V.

     

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